Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness

Triple heterojunction (THJ) tunneling field-effect transistors (TFETs) have been proposed to resolve the low ON-current challenge of TFETs. However, design space for THJ-TFETs is limited by fabrication challenges with respect device dimensions and material interfaces. This work shows that original THJ-TFET 12-nm body thickness has poor performance because its subthreshold swing (SS) 50 mV/decade only 6 μA/μm. To improve performance, doping profile engineered boost resonant efficiency. The an SS 40 over four orders drain current 325 μA/μm V GS = 0.3 V. Since multiple quantum wells interfaces in junction, transport simulations such devices are complicated. State-of-the-art mode-space simulation, including effect thermalization scattering, employed this optimize design.